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| Composite Transistors UP04111/4113/4116 Silicon PNP epitaxial planar transistor Unit: mm For switching/digital circuits 6 (0.30) 5 4 0.20+0.05 -0.02 0.100.02 1.200.05 I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 -100 125 125 -55 to +125 Unit V V mA mW C C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.02 * UP04111 * UP04113 * UP04116 Marking Symbol (R1) 9U 10 k 6S 47 k 6U 4.7 k (R2) 10 k 47 k 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Internal Connection 6 R1 Tr1 R2 1 2 R1 3 5 R2 Tr2 4 I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Symbol ICBO ICEO Emitter UP04111 IEBO cutoff current UP04113 UP04116 Collector to base voltage Collector to emitter voltage Forward current UP04111 transfer ratio UP04113 UP04116 Collector to emitter saturation voltage VCE(sat) IC = -10 mA, IB = - 0.3 mA VCBO VCEO hFE IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCE = -10 V, IC = -5 mA -50 -50 35 80 160 460 - 0.25 V Conditions VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 Min Typ Max - 0.1 - 0.5 - 0.5 - 0.1 - 0.01 V V mA Unit A 0.10 max. 5 0.550.05 I Resistance by Part Number No.1 Pin indication (0.20) * Two elements incorporated into one package (Transistor with built-in resistor) * Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50)(0.50) 1.000.05 1.600.05 5 (0.20) I Features 1.600.05 Publication date: May 2002 SJJ00001AED 1 UP04111/4113/4116 I Electrical Characteristics (continued) Ta = 25C 3C Parameter High-level output voltage Low-level output voltage UP04113 Gain bandwidth product Input resistance UP04116 UP04111 UP04113 Resistance ratio UP04111/4113 R1/R2 0.8 fT R1 Symbol VOH VOL Conditions VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k VCC = -5 V, VB = -3.5 V, RL = 1 k VCB = -10 V, IE = 1 mA, f = 200 MHz -30% 80 4.7 10 47 1.0 1.2 +30% MHz k Min -4.9 - 0.2 Typ Max Unit V V Common characteristics chart PT T a 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Characteristics chart of UP04111 IC VCE Collector to emitter saturation voltage VCE(sat) (V) -140 Ta = 25C -120 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA -20 - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 -10 -3 -1 -0.3 -0.1 -25C 25C VCE(sat) IC IC / IB = 10 hFE IC 140 VCE = -10 V Ta = 75C 120 100 25C 80 -25C 60 40 20 0 - 0.1 -100 -80 -60 -40 Ta = 75C - 0.03 - 0.01 - 0.003 -3 -10 -30 -100 -300 -1 000 - 0.001 -1 Forward current transfer ratio hFE Collector current IC (mA) -1 -10 -100 -1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 2 SJJ00001AED UP04111/4113/4116 Cob VCB 1 000 f = 1 MHz Ta = 25C -10 000 -3 000 VO = -5 V Ta = 25C IO VIN -100 -30 VIN IO VO = - 0.2 V Ta = 25C Collector output capacitance Cob (pF) Output current IO (A) -300 -100 -30 -10 -3 Input voltage VIN (V) - 1.2 - 1.4 -1.6 -1.8 -2 100 -1 000 -10 -3 -1 - 0.3 - 0.1 10 1 - 0.03 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 -100 0.1 0 -5 - 10 -15 -20 -25 -30 -35 -1 -1 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics chart of UP04113 IC VCE Collector to emitter saturation voltage VCE(sat) (V) -140 -120 Ta = 25C -10 VCE(sat) IC IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA VCE = -10 V 250 hFE IC Ta = 75C VCE = -10 V Forward current transfer ratio hFE 200 25C -25C Collector current IC (mA) -100 -80 -60 -40 -20 0 -1 150 - 0.1 Ta = 75C 25C -25C 100 50 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 -10 -100 0 -1 -10 -100 -1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB 10 IO VIN f = 1 MHz Ta = 25C -10 000 VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C Collector output capacitance Cob (pF) Output current IO (A) Input voltage VIN (V) -1 000 -10 1 -100 -1 0.1 0 -5 -10 -15 -20 -25 -30 -35 -10 -1 -1.2 -1.4 -1.6 -1.8 -2 - 0.1 - 0.1 -1 -10 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00001AED 3 UP04111/4113/4116 Characteristics chart of UP04116 IC VCE Collector to emitter saturation voltage VCE(sat) (V) -180 Ta = 25C -160 - 0.9 mA - 0.8 mA - 0.7 mA IB = -1.0 mA VCE(sat) IC -100 -30 -10 -3 -1 - 0.3 - 0.1 25C Ta = 75C -25C IC / IB = 10 hFE IC 350 VCE = -10 V 300 Ta = 75C 250 200 150 100 50 0 -1 25C -25C Collector current IC (mA) -140 -120 - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -100 -80 -60 -40 -20 0 0 -2 -4 -6 -8 - 0.03 - 0.01 -1 -3 -10 -30 -100 -300 -1 000 Forward current transfer ratio hFE -10 -12 -10 -100 -1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB 1 000 f = 1 MHz Ta = 25C -100 IO VIN VO = -5 V Ta = 25C -100 -30 VIN IO VO = - 0.2 V Ta = 25C Collector output capacitance Cob (pF) Output current IO (A) Input voltage VIN (V) 100 -30 -10 -3 -1 - 0.3 - 0.1 10 -10 1 -3 - 0.03 0.1 0 -5 - 10 -15 -20 -25 -30 -35 -1 - 0.4 - 0.8 - 1.2 -1.0 -1.2 -1.4 - 0.01 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJJ00001AED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 MAY |
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